Հրապարակման մանրամասներ:

Established in 2008

Ամսագրի կամ հրապարակման վերնագիր:

Armenian Journal of Physics=Ֆիզիկայի հայկական հանդես

Հրապարակման ամսաթիվ:

2021

Հատոր:

14

Համար:

1

ISSN:

1829-1171

Պաշտոնական URL:

Համատեղ հեղինակները:

Yerevan State University (YSU)

Ծածկույթ:

8-18

Ամփոփում:

A technology was developed for manufacturing solid-state semiconductor sensor sensitive to hydrogen peroxide vapors. Gas sensitive nanostructured films made of doped metal oxide SnO2<Co> were manufactured by the high-frequency magnetron sputtering method. The chemical composition of prepared SnO2<Co> targets was analyzed and the thickness of the deposited doped metal oxide film was measured. The morphology of the deposited Co-doped SnO2 film was studied by scanning electron microscopy. The gas sensing characteristics to the different concentrations of hydrogen peroxide vapors at various operating temperatures were also studied. The Co-doped SnO2 sensor showed enough sensitivity to very low concentration of hydrogen peroxide vapors (875 ppb) at the operating temperature of 100 °C. The SnO2<Co> based sensor can be successfully used in medical diagnostic apparatus for determining low concentration of hydrogen peroxide vapors in exhaled air.

Ձևաչափ:

pdf

Նույնացուցիչ:

click here to follow the link ; oai:arar.sci.am:269259

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