Object

Title: Optical Response of UV Laser Irradiated Extrinsic Semiconductor

Coverage:

79-84

Abstract:

Fine polished samples of p-silicon were irradiated in ambient air using Excimer Laser and Spectroscopic Ellipsometry was employed to investigate their various optical properties. The changes in optical constants (refractive index and extinction coefficient) and optical band gap energy were noticed in incident wavelength range 500–1000 nm. Both refractive index and extinction coefficient decrease exponentially before and after irradiation. A fall in the optical band gap energy of p-silicon was also observed after laser exposure, which makes the materials suitable for variety of optoelectronics applications.

Date created:

2015-04-12

Identifier:

oai:arar.sci.am:23403

Journal or Publication Title:

Armenian Journal of Physics

Date of publication:

2015

Volume:

8

Number:

2

ISSN:

1829-1171

Location of original object:

ՀՀ ԳԱԱ Հիմնարար գիտական գրադարան

Object collections:

Last modified:

Jan 12, 2021

In our library since:

Feb 27, 2020

Number of object content hits:

0

All available object's versions:

https://arar.sci.am/publication/26151

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