Հրապարակման մանրամասներ:

Established in 2008

Ամսագրի կամ հրապարակման վերնագիր:

Armenian Journal of Physics=Ֆիզիկայի հայկական հանդես

Հրապարակման ամսաթիվ:

2008

Հատոր:

1

Համար:

3

ISSN:

1829-1171

Պաշտոնական URL:

Ծածկույթ:

219-226

Ամփոփում:

Hydrogen sensor working at room and 40°C temperatures made of porous silicon covered by the TiO2x or ZnO < Al > thin film was realized. Porous silicon layer was formed by electrochemical anodization on a p- and n-type Si surface. Thereafter, n-type TiO2-x and ZnO < Al > thin films were deposited onto the porous silicon surface by electron-beam evaporation and magnetron sputtering, respectively. Platinum catalytic layer and Au electric contacts were for further measurements deposited onto obtained structures by ion-beam sputtering. The sensitivity of manufactured structures to 1000–5000 ppm of hydrogen, propane–butane mixture, and humidity was studied. The sensitivity of obtained structures was determined as ratio of the resistivity of structures in the presence of investigated gas to that in air. Results of sensitivity measurements showed that it is possible to realize a hydrogen sensor, resistivity of which can be decreased up to 2.5 times at room temperature and 4 times at 40°C for the Pt/TiO2-x/PS structure, as well as 2 times for the Pt/ZnO < Al > /PS structure at 40°C at 5000 ppm hydrogen concentration, respectively. Both structures have the recovery and response time of approximately 20 sec and rather high durability and selectivity to hydrogen gas.

Բովանդակություն:

Հրատարակության վայրը:

Թվայնացման հովանավորը:

Ստեղծման ամսաթիվը:

2008-12-10

Ձևաչափ:

pdf

Նույնացուցիչ:

oai:arar.sci.am:23202

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