Object

Title: INFLUENCE OF DEPOSITION RATE ON THE ELECTRICAL AND OPTICAL PROPERTIES OF ELECTRON-BEAM EVAPORATED InSb FILMS

Հրապարակման մանրամասներ:

Established in 2008

Ամսագրի կամ հրապարակման վերնագիր:

Armenian Journal of Physics=Ֆիզիկայի հայկական հանդես

Հրապարակման ամսաթիւ:

2012

Հատոր:

5

Համար:

2

ISSN:

1829-1171

Պաշտոնական URL:


Ծածկոյթ:

86-94

Ամփոփում:

Thin films of 300 nm thickness of non-stoichiometric indium antimonide (In0.66Sb0.34) have been deposited with different deposition rate onto well-cleaned glass substrate by electron beam evaporation technique. The electrical resistivity decreases with increasing temperature, showing the semiconducting behavior. Hall measurements indicate that the films were n-type, having carrier concentration ~1018 cm-3 and mobility ~103 cm2/Vs for the film thickness of 300 nm with different deposition rate. Activation energy of the films with deposition rate is determined. The direct band gap has been calculated by Fourier transform infrared absorption spectra recorded at room temperature. The optical band gap varies in the range 0.21–0.23 eV with deposition rate of films.

Ստեղծման ամսաթիւը:

2012-07-11

Ձեւաչափ:

pdf

Նոյնացուցիչ:

oai:arar.sci.am:23326

Բնօրինակին գտնուելու վայրը:

ՀՀ ԳԱԱ Հիմնարար գիտական գրադարան

Object collections:

Last modified:

Dec 13, 2023

In our library since:

Feb 27, 2020

Number of object content hits:

25

All available object's versions:

https://arar.sci.am/publication/26056

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