Publication Details:

Established in 2008

Journal or Publication Title:

Armenian Journal of Physics=Ֆիզիկայի հայկական հանդես

Date of publication:

2011

Volume:

4

Number:

4

ISSN:

1829-1171

Official URL:

Coverage:

211-220

Abstract:

The effect of interdiffusion and electric field on resonant states and current-voltage characteristic in GaAs/AlxGa1-xAs double-barrier structure is investigated. The Schrödinger equation is solved in the complex energy approach and the resonance energies, as well as the corresponding wave functions are obtained. The dependences of the resonance energies and the resonant current density on the electric field strength for different values of diffusion length and temperature are obtained. It is shown that for certain values of diffusion length and electric field strength the appearance of quasibound states of second type and the conversion of a number of quasibound states of first type to corresponding states of second type are possible. It is also shown that at lower temperatures interdiffusion leads to the weakening of the effect of electric field on the resonant current density while at room temperature the effect of electric field becomes stronger due to interdiffusion.

Date created:

2011-12-21

Format:

pdf

Identifier:

oai:arar.sci.am:23308

Location of original object:

ՀՀ ԳԱԱ Հիմնարար գիտական գրադարան