Պատ․ խմբ.՝ Վ. Հ․ Համբարձումյան (1944-1959) ; Մ․ Մ․ Ջրբաշյան (1960-1965) ; Ա․ Գ․ Նազարով (1966-1983) ; Պատ․ խմբ․ տեղակալ՝ Վ․ Հ․ Ղազարյան (1983-1986) ; Պատ․ խմբ․՝ Դ․ Մ․ Սեդրակյան (1987-1999) ; Գլխավոր խմբ․՝ Ս․ Ա․ Համբարձումյան (2000-2004) ; Վ․ Ս․ Զաքարյան (2005-2018) ; Ռ․ Մ․ Մարտիրոսյան (2018-2025) ; Ա․ Ս․ Սաղյան (2026-)

Charge pump ; Voltage doubler ; Overvoltage elimination

Integrated circuits increasingly rely on on-chip generation of voltage levels beyond the nominal supply. Charge pumps provide this functionality using capacitors and switches, but their boosted internal nodes raise reliability concerns in scaled CMOS technologies, especially in processes offering only thin-oxide devices. Prior studies have shown that aging mechanisms such as bias temperature instability can noticeably alter the output voltage and startup behavior of conventional series-parallel charge pumps. This paper presents an aging-aware series–parallel voltage doubler that mitigates overstress at critical output nodes while preserving the intended voltage-boost operation. The circuit is sized to match the fresh-state characteristics of the reference design, enabling a fair comparison. Simulation results under long-term BTI stress confirm improved stability of the charge-pump behavior with reduced aging-induced drift.

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