Publication Details:
Լույս է տեսնում 1966 թվականից՝ տարին 4 անգամ։
Journal or Publication Title:
ՀՀ ԳԱԱ Տեղեկագիր: Ֆիզիկա = Proceedings of the NAS RA: Physics
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Title:
Эффект резистивного переключения в структурах металл–оксид– металл с оксидным слоем ZnO:Li
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Contributor(s):
Պատ․ խմբ․՝ Գ․ Մ․ Ղարիբյան (1966-1992) ; Գլխ․ խմբ․՝ Վ․ Մ․ Հարությունյան (1993-2021) ; Կ․ Մ․ Ղամբարյան (2022-)
Subject:
Physics ; Science ; Radiation physics
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Abstract:
The resistive switching effect in metal–oxide–metal (MOM) structures have been investigated, where the 10%Li-doped ZnO layer was used as an oxide layer, as well as Pt and 20% fluorine doped SnO2 (SnO2:F) were used as bottom electrodes. Current–voltage (I–V) and switching (I–t) characteristics of Ag/ZnO:Li/Pt and Ag/ZnO:Li/SnO2:F structures were investigated. Unipolar resistive switching is detected in the structures with Pt electrode, and bipolar memory effect is found in case of using the transparent conductive SnO2:F as an electrode instead of Pt.