Mkrtchyan, A. H. ; Mkrtchyan, A. R. ; Nalbandyan, V. V. ; Ayvazyan, G. A. ; Badoyan, V. E. ; Hakopyan, A. S. ; Babayan, I. A. ; Papazyan, A. A. ; Shadyan, E. S. ; Nalbandyan, A. A.

We present the results of experimental investigations in the field of development of new generation of detectors for registration of charged elementary particles based on the physical phenomena of birth, drift and multiplication of delta electrons, originated from the interaction of charged particles with synthesized composite materials of different density in the presence of external accelerating field. For the experiments, on the matrix of high ordered silicon composite material (Si)I(CsJ)II(Ag)III of different thickness and relative density have been synthesized. On the base of them, laboratory samples of registering systems for charged particles have been developed and created. In order to explain the physical processes for charged particles, the theoretical model developed for gamma quanta is adapted and applied. It is shown that the developed approach is in good agreement with the experiments. The preliminary analysis of the obtained experimental results confirms the expediency of utilization of the phenomenon of the delta electron multiplication, as operating basis of the new generation of detectors.

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