Object

Title: DETERMINATION OF SPREADING PARAMETER IN MULTI-VALLEY SEMICONDUCTORS

Publication Details:

Established in 2008

Journal or Publication Title:

Armenian Journal of Physics

Date of publication:

2008

Volume:

1

Number:

1

ISSN:

1829-1171

Corporate Creators:

Yerevan State University

Coverage:

70-73

Abstract:

In recent years the thermoelectric properties of materials (specifically solid solutions on the basis of lead [1, 2]), in which conduction band (in the case of n-type semiconductor) or valence band (in the case of p-type semiconductor) has a two-valley structure are often investigated. During the analyses of experimental findings of thermoelectric properties it is very important to have the value of parameter -index of power in the dependence of the free path on the energy, which we’ll briefly denominate spreading parameter.

Table of contents:


Place of publishing:


Digitisation sponsor:


Date created:

2008-04-26

Format:

pdf

Identifier:

oai:arar.sci.am:23184

Location of original object:

ՀՀ ԳԱԱ Հիմնարար գիտական գրադարան

Object collections:

Last modified:

Jul 28, 2022

In our library since:

Feb 27, 2020

Number of object content hits:

1

All available object's versions:

https://arar.sci.am/publication/25885

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