Object structure

Publication Details:

Established in 2008

Journal or Publication Title:

Armenian Journal of Physics

Date of publication:

2008

Volume:

1

Number:

1

ISSN:

1829-1171

Title:

DETERMINATION OF SPREADING PARAMETER IN MULTI-VALLEY SEMICONDUCTORS

Creator:

A. I. Vahanyan

Corporate Creators:

Yerevan State University

Subject:

Electronic transport in condensed matter ; Physics

Coverage:

70-73

Abstract:

In recent years the thermoelectric properties of materials (specifically solid solutions on the basis of lead [1, 2]), in which conduction band (in the case of n-type semiconductor) or valence band (in the case of p-type semiconductor) has a two-valley structure are often investigated. During the analyses of experimental findings of thermoelectric properties it is very important to have the value of parameter -index of power in the dependence of the free path on the energy, which we’ll briefly denominate spreading parameter.

Table of contents:


Place of publishing:


Digitisation sponsor:


Date created:

2008-04-26

Type:

Հոդված

Format:

pdf

Location of original object:

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