TY - GEN
A1 - T. A. Zalinyan
N2 - Theory of electron-polar optical single phonon field-induced tunnel scattering under the influence of an electric field is considered. It is assumed that the non-degenerate polar semiconductor has a spherical parabolic band structure. In low-field regime, an expression for the scattering time is obtained. Dependence of the scattering time (the scattering rate) on the electron energy is analyzed. The results of corresponding numerical computations for an n-GaAs at 300 K are presented. It is established that there is no fracture on the curve of electron scattering time (scattering rate) dependence on the electron energy.
L1 - http://arar.sci.am/Content/23507/file_0.pdf
L2 - http://arar.sci.am/Content/23507
KW - Physics
KW - Quantum mechanics, field theories, and special relativity
KW - Optics
T1 - Relaxation Time of Electron – Polar Optical Phonon Field-Induced Tunnel Scattering
UR - http://arar.sci.am/dlibra/docmetadata?id=23507
ER -