@misc{I._M._Danglyan_Electronic,
 author={I. M. Danglyan and E. M. Kazaryan and D. B. Hayrapetyan},
 howpublished={online},
 abstract={Boron Nitride Nanotubes are valued due to their physical and chemical properties. They can be found their possible applications in the field of design and developing of optoelectronic devices of new generation. In this paper the transport and electronic properties of both clear Boron Nitride and Boron Nitride Nanotube with embedded carbon atoms have been calculated in the framework of Density Functional Theory (DFT). Results show that nanodevice with embedded carbon atoms has wider transmission spectrum than clear one. It has been computed transmission eigenvalues for both nanodevices. Nanodevice with impurity has higher transmission eigenvalues than clear one.},
 title={Electronic and Transport Properties of Boron Nitride Nanodevice},
 type={Հոդված},
 keywords={Physics, Electronic structure and electrical properties of surfaces, Materials science},
}