@misc{Maryam_Sardar_Optical,
 author={Maryam Sardar and Zaka Ullah and Anwar Latif and Bushra Jabar and Abida Perveen and Muhammad Shahid Rafique and Muhammad Khaleeq-Ur-Rahman and Laser and Optronics Centre, Department of Physics, University of Engineering & Technology, Lahore - 54890, Pakistan},
 howpublished={online},
 abstract={Fine polished samples of p-silicon were irradiated in ambient air using Excimer Laser and Spectroscopic Ellipsometry was employed to investigate their various optical properties. The changes in optical constants (refractive index and extinction coefficient) and optical band gap energy were noticed in incident wavelength range 500–1000 nm. Both refractive index and extinction coefficient decrease exponentially before and after irradiation. A fall in the optical band gap energy of p-silicon was also observed after laser exposure, which makes the materials suitable for variety of optoelectronics applications.},
 title={Optical Response of UV Laser Irradiated Extrinsic Semiconductor},
 type={article},
 keywords={Physics, 42Optics, 84Electronics; radiowave and microwave technology; direct energy conversion and storage},
}