@misc{A._I._Vahanyan_DETERMINATION,
 author={A. I. Vahanyan},
 address={},
 howpublished={online},
 contents={},
 abstract={In recent years the thermoelectric properties of materials (specifically solid solutions on the basis of lead [1, 2]), in which conduction band (in the case of n-type semiconductor) or valence band (in the case of p-type semiconductor) has a two-valley structure are often investigated. During the analyses of experimental findings of thermoelectric properties it is very important to have the value of parameter -index of power in the dependence of the free path on the energy, which we’ll briefly denominate spreading parameter.},
 title={DETERMINATION OF SPREADING PARAMETER IN MULTI-VALLEY SEMICONDUCTORS},
 type={Հոդված},
 keywords={Electronic transport in condensed matter, Physics},
}