@misc{Mounir_E._Crossover,
 author={Mounir, E. and Mabchour, H. and Ennajh, D. and El oujdi, A. and El kaaouachi, A. and Ait Hammou, B. and Echchelh, A. and Dlimi, S.},
 howpublished={online},
 abstract={In this work, we study the behavior of resistivity as a function of temperature and for several samples of ZnSxSe1-x thin films with x = 0, 0.2, 0.4, 0.5, 0.6, 0.8 and 1.0 respectively. In fact, we re-analyze in our investigation experimental measurements obtained by M. Popa et al. [1] in the range of temperature from 300 K to 500 K. We showed that the resistivity follows a nearest neighbor site hopping conduction mechanism with ��=���������� (����������) for very high temperatures and Mott variable range hopping conduction with ��=���������� (������)��/�� for relatively low temperatures. The crossover between the two regimes can be explained by the competition between the localization length scale ��������and the hopping length scale ��������.},
 title={Crossover from the Mott Variable Range Hopping Conduction Regimeto Nearest Neighbor Site Hopping Regime in ZnSxSe1-x Thin Films},
 type={Հոդված},
 keywords={Physics},
}